作者单位
摘要
1 潍坊学院 物理与光电工程学院, 山东 潍坊
2 光电信息控制和安全技术重点实验室, 天津
随着固体激光技术发展以及啁啾脉冲放大技术加持, 激光峰值功率得到极大的提高, 促进了激光物质相互作用领域的研究并衍生出若干具有很好前景的应用。激光驱动的台面级离子加速器便是其中重要的应用领域之一。激光加速的质子具有源体积小、脉冲时间短和时间分辨高等特点, 可以广泛应用于成像、医疗及科研领域, 并能有效降低这些领域的相关成本, 促进其高效发展。影响获得优质离子束的条件很多, 文中从靶形状及与激光作用后形成的等离子体性质角度对近期该研究方向的一些进展进行了总结及展望。
靶形状 等离子体性质 激光驱动 质子加速 target shape plasma properties laser-driven proton acceleration 
光电技术应用
2021, 36(3): 1
Author Affiliations
Abstract
Shandong Provincial Key Laboratory of Multi-photon Entanglement and Manipulation, Department of Physics and Electronic Science, Weifang University, Weifang 261061, China
Using the entangled two-photon systems, we experimentally demonstrate the predictions of the analog Clauser-Horne- Shimony-Holt (CHSH) inequality and investigate the robustness of the CHSH-class inequality in the bit-flip noisy environment. We obtain the experimental results of CHSH inequality and analog CHSH inequality as SCHSH=2.64±0.02 and SanalogCHSH=2.76±0.02, respectively, and prove that the analog CHSH inequality is more robust against bit-flip noise than the CHSH inequality. It provides better advantages for the experimental study and application.
光电子快报(英文版)
2017, 13(4): 318
Author Affiliations
Abstract
1 Shandong Provincial Key Laboratory of Multi-photon Entanglement and Manipulation, Department of Physics and Optoelectronic Engineering, Weifang University, Weifang 261061, China
2 Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China
Using two-step growth method and buffer layer annealing treatment, the double heterojunction structures of In0.82Ga0.18epilayer capped with InAs0.6P0.4layer were prepared on InP substrate by low pressure metal organic chemical vapor deposition (LP-MOCVD). Based on the high quality In0.82Ga0.18As structures, the In0.82Ga0.18PIN photodetector with cut-off wavelength of 2.56 μm at room temperature was fabricated by planar semiconductor technology, and the device performance was investigated in detail. The typical dark current at the reverse bias VR=10 mV and the resistance area product R0A are 5.02 μA and 0.29 Ω·cm2at 296 K and 5.98 nA and 405.2 Ω·cm2at 116 K, respectively. The calculated peak detectivities of the In0.82Ga0.18As photodetector are 1.21×1010cm·Hz1/2/W at 296 K and 4.39×1011cm·Hz1/2/W at 116 K respectively, where the quantum efficiency η=0.7 at peak wavelength is supposed. The results show that the detection performance of In0.82Ga0.18As prepared by two-step growth method can be improved greatly.
光电子快报(英文版)
2016, 12(1): 8

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